Ma LED echinyakare akachinja nzvimbo yemwenje nekuratidzwa nekuda kwekushanda kwawo kwepamusoro-soro maererano nekushanda zvakanaka, kugadzikana uye saizi yemidziyo. Ma LED anowanzo kuve ma "stack" emafirimu matete e semiconductor ane mativi e milimita, madiki zvikuru pane zvishandiso zvechinyakare zvakaita se incandescent bulbs nema cathode tubes. Zvisinei, ma optoelectronic application ari kubuda, akadai se virtual uye augmented reality, anoda ma LED ane saizi ye micron kana pasi. Tariro ndeyekuti ma micro - kana submicron scale LED (µleds) anoramba aine hunhu hwakawanda hwepamusoro hwatove nema LED echinyakare, akadai sekubuda kwakasimba, kushanda zvakanaka uye kupenya, kushandiswa kwesimba rakaderera, uye kubuda kwemavara akazara, ukuwo ari madiki kanenge kamiriyoni munzvimbo, zvichibvumira kuratidza kwakawanda. Ma LED chips akadaro anogonawo kugadzira nzira yema photonic circuits ane simba kana akakwanisa kurimwa single-chip paSi uye akabatanidzwa ne complementary metal oxide semiconductor (CMOS) electronics.
Zvisinei, kusvika pari zvino, ma µleds akadaro achiri kuoneka, kunyanya muhuwandu hwema wavelength emission kubva kugirini kusvika kutsvuku. Nzira yechinyakare ye led µ-led inzira inoitwa kubva kumusoro kusvika pasi umo mafirimu eInGaN quantum well (QW) anocherwa muzvishandiso zve micro-scale kuburikidza ne etching process. Kunyange zvazvo ma thin-film InGaN QW-based tio2 µleds akakwezva vanhu vakawanda nekuda kwehunhu hwakanaka hweInGaN, hwakadai sekutakura zvakanaka kwekutakura uye kugona kwe wavelength munzvimbo yese inoonekwa, kusvika pari zvino ave achitambudzwa nematambudziko akadai sekukuvadzwa kwe corrosion pamadziro edivi kunowedzera kana saizi yemudziyo ichiderera. Pamusoro pezvo, nekuda kwekuvapo kweminda ye polarization, ane kusagadzikana kwe wavelength/color. Padambudziko iri, mhinduro dzeInGaN ne photonic crystal cavity dzakataurwa, asi hadzina kugutsa parizvino.
Mune chinyorwa chitsva chakaburitswa muLight Science and Applications, vaongorori vanotungamirwa naZetian Mi, purofesa paYunivhesiti yeMichigan, Annabel, vakagadzira submicron scale green LED iii - nitride inokunda zvipingamupinyi izvi zvachose. µleds idzi dzakagadzirwa ne selective regional plasma-assisted molecular beam epitaxy. Kusiyana netsika yekubva kumusoro kusvika pasi, µled pano ine nanowaya dzakasiyana-siyana, imwe neimwe ine dhayamita 100 kusvika 200 nm, yakaparadzaniswa nemakumi e nanometers. Iyi nzira yekubva pasi kusvika kumusoro inodzivirira kukuvara kwengura pamadziro erutivi.
Chikamu chinoburitsa chiedza chemuchina uyu, chinozivikanwawo senzvimbo inoshanda, chinoumbwa nemagadzirirwo emugodhi we core-shell multiple quantum well (MQW) ane chimiro che nanowire morphology. Kunyanya, MQW ine InGaN well neAlGaN barrier. Nekuda kwekusiyana kwekufamba kwemaatomu eGroup III elements indium, gallium nealuminium pamadziro emativi, takaona kuti indium yakanga isipo pamadziro emativi e nanowires, uko ganda reGaN/AlGaN rakaputira MQW core seburrito. Vaongorori vakaona kuti huwandu hweAl hweganda iri reGaN/AlGaN hwakaderera zvishoma nezvishoma kubva kudivi rema electron injection e nanowires kuenda kudivi remaburi. Nekuda kwekusiyana kweminda yemukati yeGaN neAlN, gradient yehuwandu hweAl muAlGaN layer inokonzera ma free electrons, ari nyore kuyerera muMQW core uye kuderedza kusagadzikana kwemavara nekuderedza polarization field.
Kutaura zvazviri, vaongorori vakaona kuti pamidziyo iri pasi pe micron imwe chete mudhayamita, urefu hwema electroluminescence, kana kuti current-induced light emission, hunoramba hwakafanana nekuchinja kwe current injection. Pamusoro pezvo, timu yaProfessor Mi yakambogadzira nzira yekukura maGaN coatings emhando yepamusoro pa silicon kuti ikure nanowire leds pa silicon. Saka, µled inogara paSi substrate yakagadzirira kubatanidzwa nemamwe maCMOS electronics.
Iyi µled ine mashandisirwo akawanda anogona kuitwa. Puratifomu yemuchina ichava yakasimba sezvo simba remagetsi rinobuda kubva kuRGB display yakabatanidzwa pachip richikura kusvika patsvuku.
Nguva yekutumira: Ndira-10-2023